Dr. Zhenqiang (Jack) Ma

Associate Professor

Department of Electrical and Computer Engineering
University of Wisconsin-Madison
1415 Engineering Drive
Madison, WI 53706
 http://www.ece.wisc.edu/~mazq/index.htm

Phone/Fax: (608) 261-1095
Email:  mazq@engr.wisc.edu 

                       
 
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Invited Papers

  • Z. Ma, N. Jiang, G. Wang, H. Li, G. Qin, and D. Lie, “An omni-directional comparison between common-emitter and common-base SiGe HBTs,” Proceedings of 2006 8th International Conference on Solid-State and Integrated Circuits Technology (ICSICT’06), Shanghai, China, October, 23-26, 2006, pp.166-169.
  • Z. Ma, G. Wang, N. Jiang, G. E. Ponchak and S. A. Alterovitz, “Development of high power SiGe X-band (8-10 GHz) heterojunction bipolar transistors,” Chinese Journal of Semiconductors, Vol. 27, No. 2. pp. 70-75, February 2006.

  • H.-C. Yuan, M. M. Roberts, P. Zhang, B-N. Park, L. J. Klein, D. E. Savage, F. S. Flack, Z. Ma, P. G. Evans, M. A. Eriksson, G. K. Celler and M. G. Lagally, “Silicon-based nanomembrane materials:  the ultimate in strain engineering,” 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’06), Digest of Papers, San Diego, CA, January 18-20, 2006, pp. 327-333.

  • Z. Ma, “RF and microwave power amplification using SiGe HBTs: issues and prospects,” Proceedings of 2004 7th International Conference on Solid-State and Integrated Circuits Technology (ICSICT’04), Beijing, China, October, 18-21, 2004, pp.2125-2130.
  • Z. Ma, N. Jiang and G. Wang, “Correlation between SiGe HBT doping profile and operation configuration,” SiGe: Materials, Processing, and Devices, Editors: D. Harame, J. Boquet, J. Cressler, D. Houghton, H. Iwai, T.-J. King, G. Masini, J. Murota, K. Rim, and B. Tillack, ECS PV 2004-07, Honolulu, Hawaii, October 3-8, 2004, pp. 417-428.
  • M. G. Lagally, M. E. Eriksson, F. Liu, Z. Ma, G. K. Celler, D. E. Savage, L. J. Klein, K. Slinker, M. R. Roberts, B. Yang, P. P. Zhang, and M.-H. Huang, “Directed assembly and strain engineering of SiGe films and nanostructures,” SiGe: Materials, Processing, and Devices, Editors: D. Harame, J. Boquet, J. Cressler, D. Houghton, H. Iwai, T.-J. King, G. Masini, J. Murota, K. Rim, and B. Tillack, ECS PV 2004-07, Honolulu, Hawaii, October 3-8, 2004, pp. 1153-1160.
  • S. Mohammadi, L.-H. Lu, Z. Ma, L. P. B. Katehi, P. Bhattacharya, G. E. Ponchak, and E. T. Croke, “Microwave noise of Si/Si0.6Ge0.4 heterojunction bipolar transistors,” IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Garmisch, Germany, pp. 15-18, April 26-28, 2000.
  • G. S. Was, D. J. Srolovitz, Z. Ma, and D. Liang, “Microstructure control for thin film metallization,” Material Research Society Symposium Proceedings, Vol. 441, pp. 311-322, 1997.