Conference Papers

2007|2006|2005|2004|1997-2003|

2007

• H.-C. Yuan, Z. Ma, and G. K. Celler, “Flexible RF/microwave switch-PIN diodes using single-crystal Si-nanomembranes,” to appear in IEEE MIT-S International Microwave Symposium Digest, Honolulu, HI, June 3-8, 2007.
• H.-C. Yuan, Z. Ma, C. S. Ritz, D. E. Savage, M. G. Lagally and G. K. Celler, “Complementary single-crystal silicon TFTs on plastic,” 13th International Symposium on Silicon-on-Insulator Technology and devices, part of  211th Meeting of the Electrochemical Society, Chicago, IL, May 6-11, 2007.
• H. Pang, H.-C. Yuan, M. G. Lagally, G. K. Celler and Z. Ma, “Instability of threshold voltage of flexible single-crystalline Si TFTs,” 13th International Symposium on Silicon-on-Insulator Technology and devices, part of  211th Meeting of the Electrochemical Society, Chicago, IL, May 6-11, 2007.
• G. Wang, G. Qin, Z. Ma, P. Ma, M. Racanelli and George E. Ponchak,  “Power performance characteristics of SiGe power HBTS at extreme temperatures,” 2007 (45th) IEEE International Reliability Physics Symposium Proceedings, Phoenix, AZ, April 15-19, 2007.
• D.Y.C. Lie, J. Lopez, J.F. Rowland, J.D. Popp, A. Yang, A. Hurtado, G. Wang, H. Li, J. Park, and Z. Ma, “Highly efficient and linear class E SiGe medium power amplifier design,” Technical Digest of Power Amplifier Symposium, Long Beach, CA, January 8-9, 2007.
• G. Qin, G. Wang, N. Jiang and Z. Ma, “Tradeoff between CE and CB SiGe HBTs for power amplification in terms of frequency-dependent linearity and power-gain characteristics,” 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’07), Digest of Papers, Long Beach, CA, January 10-12, 2007, pp. 1-4.
• H. Li, G. Wang and Z. Ma, “Comparison of dynamic loadlines of CE and CB SiGe HBTs under equivalent bias conditions,” 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’07), Digest of Papers, Long Beach, CA, January 10-12, 2007, pp. 5-8.
• G. Wang and Z. Ma, “Influence of collector region design on high-frequency large-signal performance of SiGe power HBTs,” 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’07), Digest of Papers, Long Beach, CA, January 10-12, 2007, pp. 9-12.
• H. Li, R. A. Marsland, G. Wang, G. Qin, Z. Ma, G. Niu, Y. Cui and D. Y.C. Lie, “Minimum noise figure of SiGe HBTs under different operation configurations,” 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’07), Digest of Papers, Long Beach, CA, January 10-12, 2007, pp. 56-59.
• N. Jiang and Z. Ma, “The impact of guard rings on proton radiation effects in SiGe HBTs,” 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’07), Digest of Papers, Long Beach, CA, January 10-12, 2007, pp. 60-63.
• J.-H. Park, N. Jiang and  Z. Ma, “Influence of unit subcell selection on small- and large-signal performance of SiGe power HBTs,” 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’07), Digest of Papers, Long Beach, CA, January 10-12, 2007, pp. 64-67.
• N. Jiang, Z. Ma and H. Jiang, “Power gain analysis of SiGe HBTs under large-signal power matching conditions,” 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’07), Digest of Papers, Long Beach, CA, January 10-12, 2007, pp. 68-71.

2006

• D. R. Boris, Z. Ma, H.-C. Yuan, R. P. Ashley, J. F. Santarius, G. L. Kulcinski, “Direct conversion of D-³He protons using a solid-state PIN junction diode,” Meeting Abstract, 17^th ANS Topical Meeting on the Technology of Fusion Energy, Albuquerque, NM, November 13-15, 2006. (Full peer reviewed paper will be published in Fusion Science and Technology).
• H. Li, N. Jiang, G. Wang and Z. Ma, “Fundamental difference of power handling between CE and CB HBTs,” Digest of Papers of 2006 28^th IEEE Compound Semiconductor IC (CSIC) Symposium, San Antonio, TX, November 12-15, 2006, pp. 183-186.
• H.-C. Yuan, Z. Ma, M. G. Lagally and George E. Celler, “Threshold-voltage instability of single-crystal Si TFTs on plastic substrate,” Thin Film Transistors Technology 8 (TFT 8), ECS Transactions, Vol. 3, No. 8, Cancun, Mexico, October 29 - November 3, 2006, pp. 81-85.
• N. Jiang, H.-C. Yuan and Z. Ma, “Power gain characteristics of RF MOSFETs under different configurations,” SiGe & Ge: Materials, Processing, and Devices, ECS Transactions, Vol. 3, No. 7, Cancun, Mexico, October 29 - November 3, 2006, pp. 249-255.
• G. Qin, G. Wang and Z. Ma, “Characteristic influence of DC bias on SiGe HBT linearity and power gain under different operation configurations,” SiGe & Ge: Materials, Processing, and Devices, ECS Transactions, Vol. 3, No. 7, Cancun, Mexico, October 29 - November 3, 2006, pp. 275-285.
• N. Jiang, Z. Ma, P. Ma and M. Racanelli, “Effects of proton radiation on device modeling of SiGe power HBTs,” SiGe & Ge: Materials, Processing, and Devices, ECS Transactions, Vol. 3, No. 7, Cancun, Mexico, October 29 - November 3, 2006, pp. 919-925.
• H.-C. Yuan, N. Jiang, Z. Ma and E. T. Croke, “RF modeling of large gate-width multi-finger Si/SiGe power MODFETs,” SiGe & Ge: Materials, Processing, and Devices, ECS Transactions, Vol. 3, No. 7, Cancun, Mexico, October 29 - November 3, 2006, pp. 981-987.
• H.-C. Yuan, M. G. Lagally and Z. Ma, “Instability of threshold voltage of single-crystalline Si thin-film transistors on flexible substrate,” Meeting Abstracts, Thin Film Transistors 8 (TFT 8), part of 2006 Joint International Meeting-210th Meeting of The Electrochemical Society/XXI Congreso de la Sociedad Mexicana de Electroquimica, Cancun, Mexico, October 29 - November 3, 2006.
• G. Qin, G. Wang and Z. Ma, “Bias dependence of SiGe HBT linearity under CE and CB configurations,” Meeting Abstracts, Second International SiGe & Ge: Materials, Processing, and Device Symposium,, part of 2006 Joint International Meeting-210th Meeting of The Electrochemical Society/XXI Congreso de la Sociedad Mexicana de Electroquimica, Cancun, Mexico, October 29 - November 3, 2006.
• H.-C. Yuan, N. Jiang, E. T. Croke and Z. Ma, “Modeling of Si/SiGe multifinger RF power MODFET,” Meeting Abstracts, Second International SiGe & Ge: Materials, Processing, and Device Symposium,, part of 2006 Joint International Meeting-210th Meeting of The Electrochemical Society/XXI Congreso de la Sociedad Mexicana de Electroquimica, Cancun, Mexico, October 29 - November 3, 2006.
• N. Jiang, H.-C. Yuan and Z. Ma, “On the power gain characteristics of RF MOSFETs,” Meeting Abstracts, Second International SiGe & Ge: Materials, Processing, and Device Symposium,, part of 2006 Joint International Meeting-210th Meeting of The Electrochemical Society/XXI Congreso de la Sociedad Mexicana de Electroquimica, Cancun, Mexico, October 29 - November 3, 2006.
• N. Jiang, Z. Ma, P. Ma and M. Racanelli, “Large-signal modeling of proton radiated SiGe power HBTs,” Meeting Abstracts, Second International SiGe & Ge: Materials, Processing, and Device Symposium,, part of 2006 Joint International Meeting-210th Meeting of The Electrochemical Society/XXI Congreso de la Sociedad Mexicana de Electroquimica, Cancun, Mexico, October 29 - November 3, 2006.
• Z. Ma, N. Jiang, G. Wang, H. Li, G. Qin, and D. Lie, “An omni-directional comparison between common-emitter and common-base SiGe HBTs,” (INVITED), 2006 8^th International Conference on Solid-State and Integrated Circuits Technology (ICSICT’06) Proceedings, Shanghai, China, October, 23-26, 2006, pp. 166-169.
• N. Jiang and Z. Ma, “Impact of base doping profile on stability characteristics of SiGe HBTs,” 2006 8^th International Conference on Solid-State and Integrated Circuits Technology (ICSICT’06) Proceedings, Shanghai, China, October, 23-26, 2006, pp. 182-184.
• G. Qin, G. Wang, H. Li and Z. Ma, “Linearity and dynamic loadlines of CE and CB SiGe HBTs under the influence of DC Bias,” 2006 8^th International Conference on Solid-State and Integrated Circuits Technology (ICSICT’06) Proceedings, Shanghai, China, October, 23-26, 2006, pp. 185-187.
• G. Wang, J.-H. Park, H. Li, Z. Ma, D. Y.C. Lie, J. Lopez and A. M. Hurtado, “Influence of device size on small- and large-signal performance of SiGe power HBTs,” 2006 8^th International Conference on Solid-State and Integrated Circuits Technology (ICSICT’06) Proceedings, Shanghai, China, October, 23-26, 2006, pp. 188-190.
• N. Jiang, Z. Ma, and L. B. Li, “Operation of RF power MOSFETs under proton irradiation,” Proceedings of the 1st European Microwave Integrated Circuits Conference (EuMIC’06), Manchester, UK, September 10-15, 2006, pp. 46-49.
• G. Qin, N. Jiang, G. Wang and Z. Ma, “Configuration dependence of SiGe HBT linearity characteristics,” Proceedings of the 1st European Microwave Integrated Circuits Conference (EuMIC’06), Manchester , UK , September 10-15, 2006, pp. 107-110.
• G. Wang, H.-C. Yuan and Z. Ma, “Influence of interconnect parasitics on the lateral scaling of SiGe power HBTs,” Proceedings of the 1st European Microwave Integrated Circuits Conference (EuMIC’06), Manchester , UK , September 10-15, 2006, pp. 472-475.
• N. Jiang and Z. Ma, “Current gain of SiGe HBTs under high base doping concentrations,” Conference Digest of the 3^rd International SiGe Technology and Device Meeting (ISTDM 2006), Princeton, NJ, May 15-17, 2006, pp. 132-133.
• N. Jiang, Z. Ma, P. Ma, M. Racanelli, “Proton Radiation Tolerance of SiGe power HBTs, ” Conference Digest of the 3^rd International SiGe Technology and Device Meeting (ISTDM 2006), Princeton, NJ, May 15-17, 2006, pp. 60-61.
• H. Li, Z. Ma, P. Ma, M. Racanelli, “Thermal resistance of SiGe HBTs at high power densities,” Conference Digest of the 3^rd International SiGe Technology and Device Meeting (ISTDM 2006), Princeton, NJ, May 15-17, 2006, pp. 244-245.
• H.-C. Yuan, G. Wang, M. M. Roberts, D. E. Savage, M. G. Lagally and Z. Ma, “Flexible thin-film transistors on strained Si/SiGe membranes,” Conference Digest of the 3^rd International SiGe Technology and Device Meeting (ISTDM 2006), Princeton, NJ, May 15-17, 2006, pp. 174-175.
• G. Wang, H.-C. Yuan and Z. Ma, “On the scaling of emitter stripes of SiGe power HBTs,” Conference Digest of the 3^rd International SiGe Technology and Device Meeting (ISTDM 2006), Princeton, NJ, May 15-17, 2006, pp. 246-247.
• G. Qin, N. Jiang, G. Wang and Z. Ma, “SiGe HBT linearity comparison between CE and CB configurations,” Conference Digest of the 3^rd International SiGe Technology and Device Meeting (ISTDM 2006), Princeton, NJ, May 15-17, 2006, pp. 270-271.
• H.-C. Yuan, M. M. Roberts, D. E. Savage, M. G. Lagally and Z. Ma, “Fabrication and transistor demonstration on Si-based nanomembranes,” Technical Proceedings of the 2006 Nanotechnology Conference and Trade Show (Nano Science and Technology Institute: Nanotech 2006), Vol. 1, Boston, MA, May 7-11, 2006, pp. 68-71.
• H.-C. Yuan, M. M. Roberts, P. Zhang, B-N. Park, L. J. Klein, D. E. Savage, F. S. Flack, Z. Ma, P. G. Evans, M. A. Eriksson, G. K. Celler and M. G. Lagally, “Silicon-based nanomembrane materials:  the ultimate in strain engineering,” (INVITED), 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’06), Digest of Papers, San Diego, CA, January 18-20, 2006, pp. 327-333.
• H.-C. Yuan, N. Jiang, and Z. Ma, E. T. Croke, “Si-based multi-finger n-MODFET RF power devices,” 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’06), Digest of Papers, San Diego, CA, January 18-20, 2006, pp.62-65. (4^th Place of Best Student Paper)
• G. Wang, H.-C. Yuan,  and Z. Ma, “High performance SiGe power HBTs with wide emitter stripes,” 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’06), Digest of Papers, San Diego, CA, January 18-20, 2006, pp.316-319.
• Z. Ma and N. Jiang, “Base region optimization of SiGe HBTs for high-performance microwave power amplification,” 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’06), Digest of Papers, San Diego, CA, January 18-20, 2006, pp. 12-15.
• N. Jiang and Z. Ma, “The maximum useful doping concentration in the pinched base of SiGe HBTs in considerations of base contact resistance: a theory study,” 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’06), Digest of Papers, San Diego, CA, January 18-20, 2006, pp.97-100.
• N. Jiang, P. Ma, V. Reddy and M. Racanelli, Z. Ma, “Effect of lateral scaling on power gain of multifinger SiGe power HBTs,” 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’06), Digest of Papers, San Diego, CA, January 18-20, 2006, pp. 85-88.
• J. Park, Z. Ma, P. Ma and M. Racanelli, “A 0.1 to 14 GHz wideband SiGe BiFET power amplifier,” 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’06), Digest of Papers, San Diego, CA, January 18-20, 2006, pp.159-162.
• J. Park and Z. Ma, “A 15 GHz CMOS RF wwitch employing large-signal impedance matching,” 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’06), Digest of Papers, San Diego, CA, January 18-20, 2006, pp.186-189.

2005

• G. Wang, H.-C. Yuan, and Z. Ma, “An ultrahigh performance 8 GHz SiGe power HBT,” 2005 International Semiconductor Device Research Symposium Proceedings, Bethesda, MD, December 7-9, 2005, pp. 181-182.
• H.-C. Yuan, M. M. Roberts, D. E. Savage, M. G. Lagally, and Z. Ma, “N-type thin-film transistors fabricated on transferred, elastically strain-shared Si/SiGe/Si membranes,” 2005 International Semiconductor Device Research Symposium Proceedings, Bethesda, MD, December 7-9, 2005, pp. 207-208.  (Best Student Paper)
• N. Jiang and Z. Ma, “The role of doping profile on power gain of SiGe HBTs under constant Ge strain,” Digest of Papers of 2005 27^th IEEE Compound Semiconductor IC (CSIC) Symposium, Palm Springs, CA, October 30-November 2, 2005, pp.113-116.
• N. Jiang, Z. Ma, P. Ma, V. Reddy, and M. Racanelli, “Impact of ballast resistor implementations on power performance of SiGe power HBTs,” Proceedings of the 2005 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Santa Barbara, CA, October 9-11, 2005, pp. 276-279.
• N. Jiang, Z. Ma, P. Ma, V. Reddy, and M. Racanelli, “SiGe power HBT design considerations for IEEE 802.11 applications,” Proceedings of European Gallium Arsenide and other Compound Semiconductor Application Symposium (GAAS2005), Paris, France, October 3-4, 2005, pp.485-488.
• N. Jiang and Z. Ma, “Power gain analysis of SiGe HBTs with constant Ge strain,” Proceedings of European Gallium Arsenide and other Compound Semiconductor Application Symposium (GAAS2005), Paris, France, October 3-4, 2005, pp.153-156.
• H.-C. Yuan, B. Yang, J. M. Simmons, Z. Ma, M. A. Eriksson, M. G. Lagally, “Photodetector Based on Network of Carbon Nanotubes on Decomposed SOI,” Proceedings of SPIE -- Volume 5971 Photonic Applications in Nonlinear Optics, Nanophotonics, and Microwave Photonics, Roberto A. Morandotti, Harry E. Ruda, Jianping Yao, Editors, 597118-1-7 (Oct. 3, 2005), SPIE Photonics North, Toronto, Canada, September 12-14, 2005, pp. 289-295.
• Z. Ma, G. Wang, N. Jiang, G. E. Ponchak and S. A. Alterovitz, “SiGe power HBTs and MMIC medium power amplifiers operated at 8-10 GHz,” IEEE 2005 International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (MAPE’05)  Proceedings, Beijing, China, August 8-12, 2005, pp. 823-826.

2004

• Z. Ma, “RF and microwave power amplification using SiGe HBTs: issues and prospects,” (INVITED), Proceedings of 2004 7^th International Conference on Solid-State and Integrated Circuits Technology (ICSICT’04), Beijing, China, October, 18-21, 2004, pp.2125-2130.
• Z. Ma, N. Jiang and G. Wang, “Correlation between SiGe HBT doping profile and operation configuration,” (INVITED), SiGe: Materials, Processing, and Devices, Editors: D. Harame, J. Boquet, J. Cressler, D. Houghton, H. Iwai, T.-J. King, G. Masini, J. Murota, K. Rim, and B. Tillack, ECS PV 2004-07, Honolulu, Hawaii, October 3-8, 2004, pp. 417-428.
• M. G. Lagally, M. E. Eriksson, F. Liu, Z. Ma, G. K. Celler, D. E. Savage, L. J. Klein, K. Slinker, M. R. Roberts, B. Yang, P. P. Zhang, and M.-H. Huang, “Directed assembly and strain engineering of SiGe films and nanostructures,” (INVITED), SiGe: Materials, Processing, and Devices, Editors: D. Harame, J. Boquet, J. Cressler, D. Houghton, H. Iwai, T.-J. King, G. Masini, J. Murota, K. Rim, and B. Tillack, ECS PV 2004-07, Honolulu, Hawaii, October 3-8, 2004, pp. 1153-1160.
• Z. Ma, N. Jiang and G. Wang, “Correlation between SiGe HBT doping profile and operation configuration,” Meeting Abstracts, 2004 Joint International Meeting - 206th Meeting of the Electrochemical Society/2004 Fall Meeting of the Electrochemical Society of Japan,  Honolulu, Hawaii, October 3-8, 2004, pp. 1329.
• N. Jiang, G. Wang and Z. Ma, “Analytical explanation of different RF characteristics exhibited with common-emitter and common-base bipolar transistors,” Proceedings of the 2004 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM’04), Montreal, Canada, September 13-14, 2004, pp. 112-115.
• G. Wang, C. Qin, N. Jiang and Z. Ma, “Boosting up performance of power SiGe HBTs using advanced layout concept,” 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’04), Digest of Papers, Atlanta, GA, September 8-10, 2004, pp. 135-138. (Finalist of Best Student Paper)
• N. Jiang and Z. Ma, “Ohmic contacts on nitrogen-doped UNCD films and observation of band offset between UNCD and Si,” 46^th Electronic Materials Conference (EMC), Notre Dame, IN, June 23-25, 2004.
• N. Jiang, G. Wang, Z. Ma, P. Ma, and M. Racanelli, "3-W SiGe Power HBTs for Wireless Applications", Conference Digest of the Second International SiGe Technology and Device Meeting (ISTDM), Frankfurt, Germany, May 16-19, 2004, pp.

1997-2003

• Z. Ma, S. Mohammadi, P. Bhattacharya, L. P. B. Katehi, S. A. Alterovitz and G. E. Ponchak, K. M. Strohm, J.-F. Luy, “SiGe-based power HBTs for high-frequency microwave power amplification,” 2002 Asia-Pacific Microwave Conference (APMC) Proceedings, Kyoto, Japan , November 19 – 22, 2002, Vol. 3, pp. 1563-1566.
• Z. Ma, S. Mohammadi, P. Bhattacharya, L. P. B. Katehi, S. A. Alterovitz and G. E. Ponchak, “An 8.4 GHz SiGe/Si HBT-based MMIC power amplifier,” Proceedings of the 2002 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Monterey, CA, September 29 – October 1, 2002, pp. 151-154.
• S. Mohammadi, Z. Ma, J. Park, P. Bhattacharya, L. P. B. Katehi, G. E. Ponchak, S. A. Alterovitz, K. M. Strohm and J.-F. Luy, “SiGe/Si power HBTs for X- to K-band applications,” IEEE MTT-S International Microwave Symposium Digest, Seattle, WA, June 2-7, 2002, Vol. 1, pp. 289-292.
• S. Mohammadi, Z. Ma, J. Park, P. Bhattacharya, L. P. B. Katehi, G. E. Ponchak, S. A. Alterovitz, K. M. Strohm and J.-F. Luy, “SiGe/Si power HBTs for X- to K-band applications,” 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest, Seattle, WA, June 2-4, 2002, pp. 373-376.
• Z. Ma, J.-S. Rieh, P. Bhattacharya, S. A. Alterovitz, G. E. Ponchak, E. T. Croke, “Long-term reliability of Si/Si_0.7Ge_0.3/Si HBTs from accelerated lifetime testing,” IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Ann Arbor, MI, September 12-14, 2001, pp. 122-130.
• Z. Ma, S. Mohammadi, P. Bhattacharya, L. P. B. Katehi, S. A. Alterovitz and G. E. Ponchak, “Power performance of X-band Si/Si_0.75Ge_0.25/Si HBTs,” IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Ann Arbor, MI, September 12-14, 2001, pp. 170-176.
• Z. Ma, S. Mohammadi, P. Bhattacharya, L. P. B. Katehi, G. E. Ponchak, S. A. Alterovitz, K. M. Strohm, J.-F. Luy, “A 180mW 18 GHz Si/SiGe power heterojunction bipolar transistor,” IEEE Topical Workshop on Power Amplifiers for Wireless Communications,  La Jolla, CA, September 10-11, 2001.
• Z. Ma, S. Mohammadi, P. Bhattacharya, L. P. B. Katehi, G. E. Ponchak, S. A. Alterovitz, K. Strohm, J.-F. Luy, “Si/SiGe power heterojunction bipolar transistors for Ku-Band applications,” late news paper in 59^th Device Research Conference, Notre Dame, IN, June 25-27, 2001.
• L.-H. Lu, S. Mohammadi, Z. Ma, G. E. Ponchak, S. A. Alterovitz, K. M. Strohm, J.-F. Luy, P. Bhattacharya, L. P. B. Katehi, “Power SiGe heterojunction bipolar transistors (HBTs) fabricated by fully self-aligned double mesa technology,” IEEE MTT-S International Microwave Symposium Digest, Phoenix, AZ, Vol. 3, pp. 1709-1712, May 20-25, 2001.
• S. Mohammadi, L.-H. Lu, Z. Ma, L. P. B. Katehi, P. Bhattacharya, G. E. Ponchak, and E. T. Croke, “Microwave noise of Si/Si_0.6Ge_0.4 heterojunction bipolar transistors,” (INVITED), IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Garmisch, Germany, pp. 15-18, April 26-28, 2000.
• Z. Ma, J.-S. Rieh, P. Bhattacharya and E. T. Croke, “Accelerated lifetime testing of Si/SiGe/Si heterojunction bipolar transistors,” 2^nd Annual Microelectronics Reliability and Qualification Workshop Technical Digest, Pasadena, CA, October, 1999.
• J.-S. Rieh, L.-H. Lu, Z. Ma, X. Liu, L. P. B. Katehi, P. Bhattacharya, and E. T. Croke, “Small- and large-signal operation of X-band CE and CB SiGe/Si power HBTs,” IEEE MTT-S International Microwave Symposium Digest, Anaheim, CA, Vol. 3, pp. 1191-1194, June 13-19, 1999.
• Z. Ma, L. Dong, G. S. Was and D. J. Srolovitz, “Microstructure control for hillock suppression in thin film metallization,” 1997 Flat Panel Display Strategic Forum and Technical Symposium (SID Flat Panel Display’97) Paper Digest, Ypsilanti, MI, pp. 161-167, September 22-23, 1997.
• G. S. Was, D. J. Srolovitz, Z. Ma, and D. Liang, “Microstructure control for thin film metallization,” (INVITED), Material Research Society Symposium Proceedings, Vol. 441, pp. 311-322, 1997.