Dr. Zhenqiang (Jack) Ma

Assistant Professor

Department of Electrical and Computer Engineering
University of Wisconsin-Madison
1415 Engineering Drive
Madison, WI 53706
 http://www.ece.wisc.edu/~mazq/index.htm

Phone/Fax: (608) 261-1095
Email:  mazq@engr.wisc.edu 

                       
 
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Selected Publications

  • G. Wang, H.-C. Yuan and Z. Ma, “On the scaling of emitter stripes of SiGe power HBTs,” Semiconductor Science and Technology, Vol. 22, pp. S84-S88, 2007.
  • G. Qin, N. Jiang, G. Wang and Z. Ma, “SiGe HBT linearity comparison between CE and CB configurations,” Semiconductor Science and Technology, Vol. 22, pp. S216-S220, 2007.  
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  • P. K. L. Chan, K. P. Pipe, G. Qin and Z. Ma, "CCD-based thermoreflectance imaging of urrent dynamics in high power SiGe HBTs," Applied Physics Letters, Vol. 89, pp. 233521-1-3, 2006.
  • H.-C. Yuan and Z. Ma, “Microwave thin-film transistors using Si nanomembranes on flexible polymer substrate,” Vol. 89, pp. 212105-1-3, Applied Physics Letters, 2006.
  • H.-C. Yuan, N. Jiang, Z. Ma and E. T. Croke, “High-gain multi-finger power n-MODFET on Si substrate,” Electronics Letters, Vol. 42, No. 6, pp. 375-376, March 2006.
  • G. Wang, H.-C. Yuan, and Z. Ma, “Ultrahigh-performance 8-GHz SiGe power HBT,” IEEE Electron Device Letters, Vol. 27, No. 5, pp. 371-373, May 2006.
  • H.-C. Yuan, Z. Ma, M. M. Roberts, D. E. Savage and M. G. Lagally, “High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers,” Journal of Applied Physics, Vol. 100. pp. 013708-1-013708-5, 2006.
  • Z. Ma and N. Jiang, “Base region optimization of SiGe HBTs for high-frequency microwave power amplification,” IEEE Transactions on Electron Devices, Vol. 53, No. 4, pp. 875-883, April 2006.
  • Z. Ma and N. Jiang, “On the operation configuration of SiGe HBTs based on power gain analysis,” IEEE Transactions on Electron Devices, Vol. 52, No. 2, pp. 248-255, February 2005.
  • Z. Ma, S. Mohammadi, P. Bhattacharya, L. P. B. Katehi, S. A. Alterovitz and G. E. Ponchak, ”A high power and high gain X-band Si/SiGe/Si heterojunction bipolar transistor,” IEEE Trans. on Microwave Theory and Techniques, Vol. 50, No. 4, pp. 1101-1108, April 2002.
  • Z. Ma, P. Bhattacharya, J.-S. Rieh, G. E. Ponchak, S. A. Alterovitz, E. T. Croke, “Reliability of microwave SiGe/Si heterojunction bipolar transistors,” IEEE Microwave and Wireless Components Letters, Vol. 11, No. 10, pp. 401-403, October 2001.
  • Z. Ma and G. S. Was, “Aluminum metallization for flat-panel displays using ion-beam-assisted physical vapor deposition,” Journal of Materials Research, Vol. 14, No. 10, pp. 4051-4061, October, 1999.