Dr. Zhenqiang (Jack) Ma

Associate Professor

Department of Electrical and Computer Engineering
University of Wisconsin-Madison
1415 Engineering Drive
Madison, WI 53706
 http://www.ece.wisc.edu/~mazq/index.htm

Phone/Fax: (608) 261-1095
Email:  mazq@engr.wisc.edu 

                       
 
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Journal Papers

2007|2006|2005|1997-2004

2007

  • J. Shin, P. Bhattacharya, H.-C. Yuan, Z. Ma, and G. Varo, "A low-power bacteriorhodopson-silicon NMOSFET photoreceiver," to appear in Optics Letters, 2007.

  • H. Li, Z. Ma, P. Ma, M. Racanelli, “Thermal resistance of SiGe HBTs at high power densities,”  Semiconductor Science and Technology, Vol. 22, pp. S46-S49, 2007.

  • N. Jiang and Z. Ma, “Current gain of SiGe HBTs under high base doping concentrations,” Semiconductor Science and Technology, Vol. 22, pp. S168-172, 2007.
  • N. Jiang, Z. Ma, P. Ma, M. Racanelli, “Proton radiation tolerance of SiGe power HBTs,”  Semiconductor Science and Technology, Vol. 22, pp. S46-S49, 2007.
  • G. Wang, H.-C. Yuan and Z. Ma, “On the scaling of emitter stripes of SiGe power HBTs,”  Semiconductor Science and Technology, Vol. 22, pp. S84-S88, 2007.
  • G. Qin, N. Jiang, G. Wang and Z. Ma, “SiGe HBT linearity comparison between CE and CB configurations,”  Semiconductor Science and Technology, Vol. 22, pp. S216-S220, 2007. 
  • H.-C. Yuan, G. Wang, M. M. Roberts, D. E. Savage, M. G. Lagally and Z. Ma, “Flexible thin-film transistors on biaxial- and uniaxial-strained Si and SiGe membranes,” Semiconductor Science and Technology, Vol. 22, pp. S72-S75, 2007.  

2006

  • P. K. L. Chan, K. P. Pipe, G. Qin and Z. Ma, "CCD-based thermoreflectance imaging of urrent dynamics in high power SiGe HBTs," to appear in Applied Physics Letters, 2006.
  • H.-C. Yuan and Z. Ma, “Microwave thin-film transistors using Si nanomembranes on flexible polymer substrate,” to appear in Applied Physics Letters, 2006.
  • H.-C. Yuan, N. Jiang, Z. Ma and E. T. Croke, “High-gain multi-finger power n-MODFET on Si substrate,” Electronics Letters, Vol. 42, No. 6, pp. 375-376, March 2006.
  • G. Wang, H.-C. Yuan, and Z. Ma, “Ultrahigh-performance 8-GHz SiGe power HBT,” IEEE Electron Device Letters, Vol. 27, No. 5, pp. 371-373, May 2006.
  • N. Jiang, Z. Ma, P. Ma and M. Racanelli, “Impact of proton radiation on the large-signal power performance of SiGe power HBTs,” IEEE Transactions on Nuclear Science, Vol. 53, No. 4, pp. 2361-2366, August 2006.
  • H.-C. Yuan, Z. Ma, M. M. Roberts, D. E. Savage and M. G. Lagally, “High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers,” Journal of Applied Physics, Vol. 100. pp. 013708-1-013708-5, 2006.
  • Z. Ma, G. Wang, N. Jiang, G. E. Ponchak and S. A. Alterovitz, “Development of high power SiGe X-band (8-10 GHz) heterojunction bipolar transistors,” (INVITED), Chinese Journal of Semiconductors, Vol. 27, No. 2. pp. 70-75, February 2006.
  • Z. Ma and N. Jiang, “Base region optimization of SiGe HBTs for high-frequency microwave power amplification,” IEEE Transactions on Electron Devices, Vol. 53, No. 4, pp. 875-883, April 2006.

2005

  • Z. Ma, N. Jiang, G. Wang and S. A. Alterovitz, “An 18 GHz, 300 mW SiGe power HBT,” IEEE Electron Device Letters, Vol. 26, No. 6, pp. 381-383, June 2005.
  • Z. Ma and N. Jiang, “On the operation configuration of SiGe HBTs based on power gain analysis,” IEEE Transactions on Electron Devices, Vol. 52, No. 2, pp. 248-255, February 2005.
  • N. Jiang, Z. Ma, G. Wang, P. Ma and M. Racanelli, “3-W SiGe power HBTs for wireless applications,” Elsevier Science: Materials Science in Semiconductor Processing, Vol. 8, No. 1-3, pp. 323-326, 2005.

1997-2004

  • Z. Ma, S. Mohammadi, P. Bhattacharya, L. P. B. Katehi, S. A. Alterovitz and G. E. Ponchak, ”A high power and high gain X-band Si/SiGe/Si heterojunction bipolar transistor,” IEEE Trans. on Microwave Theory and Techniques, Vol. 50, No. 4, pp. 1101-1108, April 2002.
  • Z. Ma, P. Bhattacharya, J.-S. Rieh, G. E. Ponchak, S. A. Alterovitz, E. T. Croke, “Reliability of microwave SiGe/Si heterojunction bipolar transistors,” IEEE Microwave and Wireless Components Letters, Vol. 11, No. 10, pp. 401-403, October 2001.
  • Z. Ma, S. Mohammadi, P. Bhattacharya, L. P. B. Katehi, S. A. Alterovitz, G. E. Ponchak, K. M. Strohm and J.-F. Luy, ”Ku-band (12.6 GHz) SiGe/Si high-power heterojunction bipolar transistors,” Electronics Letters, Vol. 37, No. 18, pp. 1140-1142, August 2001.
  • Z. Ma, S. Mohammadi, L.-H. Lu, P. Bhattacharya, L. P. B. Katehi, S. A. Alterovitz, G. E. Ponchak, “An X-band high-power amplifier using SiGe/Si HBT and lumped passive components,” IEEE Microwave and Wireless Components Letters, Vol. 11, No. 7, pp. 287-289, July 2001.
  • Z. Ma, S. Mohammadi, P. Bhattacharya, L. P. B. Katehi, S. A. Alterovitz, G. E. Ponchak, “High power X-band (8.4GHz) SiGe/Si heterojunction bipolar transistor,” Electronics Letters, Vol. 37, No. 12, pp. 790-791, June 2001.
  • O. Qasaimeh, Z. Ma, P. Bhattacharya, E. T. Croke, “Monolithically integrated multichannel SiGe/Si p-i-n-HBT photoreceiver arrays,” Journal of Lightwave Technology, Vol. 18, No. 11, pp. 1548-1553, November 2000.
  • G. S. Was, H. Ji, and Z. Ma, “Texture control in thin films using ion bombardment,” Texture and Microstructures, Vol. 34, pp. 105-118, 2000.
  • Z. Ma and G. S. Was, “Aluminum metallization for flat-panel displays using ion-beam-assisted physical vapor deposition,” Journal of Materials Research, Vol. 14, No. 10, pp. 4051-4061, October, 1999.